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[electronic] high voltage high voltage diode R2000F GERT R2KF 30mA 8kV high voltage silicon stack

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[electronic] high voltage high voltage diode R2000F GERT R2KF 30mA 8kV high voltage silicon stack
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  • Description
  • Reviews(76)
Specifications
brand HVGT

R2000F parameter table Datasheet:

Model Type

R2000F

Manufacturer Manufacturer

HVGT

Reverse repetitive peak voltage VRRM

2.0KV

Forward average cuRRent IF(AV)

200mA

Forward non repetitive surge current IFSM

30A

Positive peak voltage IF=10 (mA) VFM

2.0V

Reverse direct currentVR=VRRM(kV) IRTa=25 C

5.0uA

Reverse recovery time Trr

500nS

Reverse direct currentVR=VRRM(kV) IRToil=100 C

100uA

PN Junction capacitance CJ

6.0pF

Working temperature Tj

-65~175C

Storage temperature TSTG

-65~175 C

Outline dimension Size: Shape (mm Unit:)

 

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